| PART |
Description |
Maker |
| IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
| 5962F9671501VCC 5962F9671501VXC ACTS125MS ACTS125H |
Radiation Hardened Quad Buffer/ Three-State
Radiation Hardened Quad Buffer Three-State
From old datasheet system
Radiation Hardened Quad Buffer, Three-State 辐射加固四缓冲，三
ECONOLINE: RD & RC - Dual Output from a Single Input Rail- 1kVDC & 2kVDC Isolation- Power Sharing on Output- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 86% 辐射加固四缓冲，三
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM)
Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24
Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp.
Intersil Corporation
|
| HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc.
Intersil, Corp.
Intersil Corporation
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HS-2510RH 5962D9568601VPA HS9-2510RH-Q HS7-2510RH- |
Radiation Hardened High Slew Rate Operational Amplifier
Radiation Hardened High Slew Rate Operational Amplifier OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CDIP8
CAP TANT LOESR 330UF 10V 20% SMD
Radiation Hardened High Slew Rate
Operational Amplifier(抗辐射高输出电压转换速率、低偏置电流运算放大
|
Intersil, Corp.
Intersil Corporation
|
| FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 5962F9467602VPA 5962F9467602VPC HS7B-1100RH-Q HS7- |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust
Radiation Hardened, Ultra High Speed
Current Feedback Amplifier(抗辐射超高速电流反馈放大器)
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Gray; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
Radiation Hardened, Ultra High Speed Current Feedback Amplifier VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier 1 CHANNEL, VIDEO AMPLIFIER, CDIP8
Radiation Hardened, Ultra High Speed Current Feedback Amplifier
|
Intersil Corporation
Intersil, Corp.
|
| IRHY57133CMSE |
RADIATION HARDENED POWER MOSFET
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
|
International Rectifier
|
| IRHNA7264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| XQVR1000-4CG560M XQVR1000-4CG560V XQVR600-4CB228M |
2.5V Radiation Hardened FPGAs 2.5V的抗辐射FPGA
QPro Virtex 2.5V Radiation Hardened FPGAs
|
Panduit, Corp.
Xilinx, Inc.
|
| IRHF7110 IRHF8110 IRHF3110 IRHF4110 IRHF4110NBSP |
RADIATION HARDENED POWER MOSFET THRU-HOLE 抗辐射功率MOSFET的通孔
From old datasheet system
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package
|
IRF[International Rectifier]
|
